Theoretical and Natural Science
- The Open Access Proceedings Series for Conferences
Vol. 26, 20 December 2023
* Author to whom correspondence should be addressed.
In the evolution of integrated circuit technology, chip size and performance enhancement stand as paramount and challenging domains of progress. Yet, a dearth of foundational simulations and comparisons for introductory purposes exists. Consequently, this study delves into an introduction of distinct advanced integrated circuit (IC) technologies: CMOS, FinFET, and CNTFET, dissecting their merits and limitations. Subsequently, a preliminary simulation is executed to authenticate specific characteristics inherent to these IC technologies. Discoveries indicate that as IC transistors scale down, there are marked improvements in transistor performance, encompassing aspects such as switching speed, noise immunity, power efficiency, and heat dissipation. Further, a simulation grounded on a NAND gate substantiates certain traits in CMOS and FinFET, specifically switching speed, propagation delay, and noise margin. The results illustrate a superior performance of FinFET over CMOS. Additionally, as CMOS technology scales, its efficacy enhances. Nonetheless, the present research and simulations hold potential uncertainties and constraints, paving avenues for more refined investigations in the future.
CMOS, FinFET, CNTFET, Switching speed, Noise margin
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The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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