Theoretical and Natural Science

- The Open Access Proceedings Series for Conferences


Theoretical and Natural Science

Vol. 26, 20 December 2023


Open Access | Article

Comparative analysis of logic gates based on CMOS, FINFET, and CNFET: Characteristics and simulation insights

Yichen Zhang * 1
1 University of Bristol

* Author to whom correspondence should be addressed.

Theoretical and Natural Science, Vol. 26, 44-53
Published 20 December 2023. © 2023 The Author(s). Published by EWA Publishing
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Citation Yichen Zhang. Comparative analysis of logic gates based on CMOS, FINFET, and CNFET: Characteristics and simulation insights. TNS (2023) Vol. 26: 44-53. DOI: 10.54254/2753-8818/26/20241011.

Abstract

In the evolution of integrated circuit technology, chip size and performance enhancement stand as paramount and challenging domains of progress. Yet, a dearth of foundational simulations and comparisons for introductory purposes exists. Consequently, this study delves into an introduction of distinct advanced integrated circuit (IC) technologies: CMOS, FinFET, and CNTFET, dissecting their merits and limitations. Subsequently, a preliminary simulation is executed to authenticate specific characteristics inherent to these IC technologies. Discoveries indicate that as IC transistors scale down, there are marked improvements in transistor performance, encompassing aspects such as switching speed, noise immunity, power efficiency, and heat dissipation. Further, a simulation grounded on a NAND gate substantiates certain traits in CMOS and FinFET, specifically switching speed, propagation delay, and noise margin. The results illustrate a superior performance of FinFET over CMOS. Additionally, as CMOS technology scales, its efficacy enhances. Nonetheless, the present research and simulations hold potential uncertainties and constraints, paving avenues for more refined investigations in the future.

Keywords

CMOS, FinFET, CNTFET, Switching speed, Noise margin

References

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Data Availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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Volume Title
Proceedings of the 3rd International Conference on Computing Innovation and Applied Physics
ISBN (Print)
978-1-83558-235-0
ISBN (Online)
978-1-83558-236-7
Published Date
20 December 2023
Series
Theoretical and Natural Science
ISSN (Print)
2753-8818
ISSN (Online)
2753-8826
DOI
10.54254/2753-8818/26/20241011
Copyright
20 December 2023
Open Access
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Copyright © 2023 EWA Publishing. Unless Otherwise Stated